IRF1405 MOSFET - 55V 169A N-Channel Power MOSFET?
RWF 1,000
IRF1405 stripe planar design of Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area
Product Description
IRF1405 stripe planar design of Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area
Specifications
Specifications
- Drain-to-Source Breakdown Voltage: 55V
- Gate-to-Source Voltage, max: �20V
- Drain-Source On-State Resistance, max: 300Ohm
- Continuous Drain Current: 133A
- Total Gate Charge: 170nC
- Power Dissipation: 200W
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