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IRF1405 MOSFET - 55V 169A N-Channel Power MOSFET?

RWF 1,000

IRF1405 stripe planar design of Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area


Product Description

IRF1405 stripe planar design of Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area

Specifications

  • Drain-to-Source Breakdown Voltage: 55V

  • Gate-to-Source Voltage, max: �20V

  • Drain-Source On-State Resistance, max: 300Ohm

  • Continuous Drain Current: 133A

  • Total Gate Charge: 170nC

  • Power Dissipation: 200W

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