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IRF5620

RWF 1,000

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area


Product Description

This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area

Specifications

  • Type: n-channel

  • Drain-to-Source Breakdown Voltage: 200 V

  • Gate-to-Source Voltage, max: �20 V

  • Drain-Source On-State Resistance, max: 77.500 Ohm

  • Continuous Drain Current: 24 A

  • Total Gate Charge: 25 nC

  • Power Dissipation: 144 W

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