Product Description
- Type Designator: 2SD2253
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation (Pc): 50 W
- Maximum Collector-Base Voltage |Vcb|: 1700 V
- Maximum Collector-Emitter Voltage |Vce|: 600 V
- Maximum Emitter-Base Voltage |Veb|: 5 V
- Maximum Collector Current |Ic max|: 6 A
- Operating Junction Temperature (Tj): 150 �C
- Transition Frequency (ft): 3 MHz
- Collector Capacitance (Cc): 250 pF
- Forward Current Transfer Ratio (hFE), MIN: 28
- Noise Figure, dB: -
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