The D13003 is a high‑performance NPN silicon transistor housed in a robust TO‑220EW package. Designed with planar construction and a triple‑diffused process, it delivers low saturation voltage, high breakdown capability, and excellent reliability for demanding electronic ballast, transformer, and fluorescent lamp applications.

Key Features

• TO‑220EW package with planar construction for superior heat dissipation


• Low switch power loss and short switching times (fall time 0.8 µs, storage time 1.5‑3.0 µs)


• High breakdown voltages: V_CBO = 700 V, V_CEO = 400 V


• Wide safe operating area (SOA) for demanding power circuits


• RoHS compliant – environmentally friendly


• Suitable for electronic ballasts, transformers, and low‑voltage fluorescent lamp drivers

Absolute Maximum Ratings (Tc = 25 °C)

• Collector‑Base Voltage (V_CBO): 700 V


• Collector‑Emitter Voltage (V_CEO): 400 V


• Emitter‑Base Voltage (V_EBO): 9 V


• Collector Current (I_C): 2 A


• Total Power Dissipation (P_C): 3 W (Tc = 25 °C), 50 W (Pc)


• Junction Temperature (T_j): 150 °C


• Storage Temperature (T_stg): –55 °C to 150 °C

Electrical Characteristics (Tc = 25 °C)

• Collector‑Base Breakdown Voltage (B_VCBO): 700 V @ I_C=1 mA


• Collector‑Emitter Breakdown Voltage (B_VCEO): 400 V @ I_C=10 mA


• Emitter‑Base Breakdown Voltage (B_VEBO): 9 V @ I_E=1 mA


• Collector‑Base Cutoff Current (I_CBO): 20 µA @ V_CB=680 V


• Collector‑Emitter Saturation Voltage (V_CE(sat)): 1.0 V @ I_C=1 A, I_B=0.25 A


• Base‑Emitter Saturation Voltage (V_BE(sat)): 1.2 V @ I_C=1 A, I_B=0.25 A


• DC Current Gain (h_FE): 15‑30 @ V_CE=5 V, I_C=0.5 A


• Current Gain Bandwidth (f_T): 5 MHz @ V_CE=10 V, I_C=100 mA