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DD5011 D5011 5011 TO-220

RWF 2,000


Product Description


  • Type Designator: 2SD2253

  • Material of Transistor: Si

  • Polarity: NPN

  • Maximum Collector Power Dissipation (Pc): 50 W

  • Maximum Collector-Base Voltage |Vcb|: 1700 V

  • Maximum Collector-Emitter Voltage |Vce|: 600 V

  • Maximum Emitter-Base Voltage |Veb|: 5 V

  • Maximum Collector Current |Ic max|: 6 A

  • Operating Junction Temperature (Tj): 150 �C

  • Transition Frequency (ft): 3 MHz

  • Collector Capacitance (Cc): 250 pF

  • Forward Current Transfer Ratio (hFE), MIN: 28

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