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IRF3710 MOSFET

RWF 1,000

Designed for high efficiency switch mode power supplies, Power factor correction and electronic lamp ballasts based On half bridge


Product Description

Designed for high efficiency switch mode power supplies, Power factor correction and electronic lamp ballasts based On half bridge

Specifications

  • Drain-to-Source Breakdown Voltage: 100V

  • Gate-to-Source Voltage, max: �20V

  • Drain-Source On-State Resistance, max: 000Ohm

  • Continuous Drain Current: 57A

  • Total Gate Charge: 7nC

  • Power Dissipation: 200W

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