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IRF5801

RWF 1,000

Type Designator: IRF5801

Type of Transistor: MOSFET


Product Description

Type Designator: IRF5801

Type of Transistor: MOSFET

Specifications

  • Type: n-channel

  • Drain-to-Source Breakdown Voltage: 200 V

  • Gate-to-Source Voltage, max: �30 V

  • Drain-Source On-State Resistance, max: 999.999 Ohm

  • Continuous Drain Current: 0.6 A

  • Total Gate Charge: 3.9 nC

  • Power Dissipation: 2 W


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