IRF830 N-Channel Power MOSFET
RWF 1,000
IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The Mosfet has a maximum drain to source voltage of 500V.
Product Description
IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The Mosfet has a maximum drain to source voltage of 500V.
Specifications
Specifications
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 500 V
- Gate-to-Source Voltage, max: �20 V
- Drain-Source On-State Resistance, max: 1.5 m?
- Continuous Drain Current: 4.5 A
- Total Gate Charge: 38 nC
- Power Dissipation: 74 W
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