IRFB4110 is a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Featured by Sharvi Electronics It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

Specifications

• Transistor Polarity: N-Channel


• Number of Channels: 1 Channel


• Configuration: Single


• Drain-Source Breakdown Voltage: 100V


• Continuous Drain Current: 180A


• Drain-Source Resistance: 3.7M Ohms


• Gate-Source Voltage: -20 ~ +20V


• Gate-Source Threshold Voltage: 1.8V


• Gate Charge: 150nC


• Minimum Operating Temperature: -55�C


• Maximum Operating Temperature: +175�C


• Power Dissipation: 370 Watt


• Packaging: Tube


• Mounting Style: Through Hole


• Package/Case: TO-220-3


• Length: 10mm


• Width: 4.4mm


• Height: 15.65mm


• Approx Weight: 3 gm

Applications

• High Efficiency Synchronous Rectification in SMPS


• Uninterruptible Power Supply


• High Speed Power Switching


• Hard Switched and High-Frequency Circuits