Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 140 W
Maximum Drain-Source Voltage 'Vds': 100 V
Maximum Gate-Source Voltage 'Vgs': 20 V
Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V
Maximum Drain Current 'Id': 33 A
Maximum Junction Temperature (Tj): 175 �C
Total Gate Charge (Qg): 94(max) nC
Rise Time (tr): 39 nS
Drain-Source Capacitance (Cd): 330 pF
Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm
Package: TO247