IRFP260N MOSFET - 200V 50A N-Channel Power
RWF 2,500
IRFP260N is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Product Description
- Type: n-channel
- Drain-to-Source Breakdown Voltage: 200 V
- Gate-to-Source Voltage, max: �20 V
- Drain-Source On-State Resistance, max: 40 m?
- Continuous Drain Current: 49 A
- Total Gate Charge: 156 nC
- Power Dissipation: 300 W
- Package: TO-247AC
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