Product Description
2SC1623 is a surface mount NPN silicon epithaxial transistor with High DC Current Gain: hFE = 200 Typical at (VCE = 6.0 V, IC = 1.0 mA) and High Voltage: VCEO = 50.The device is designed for Audio Frequency General Purpose Amplifier.
Specifications
Specifications
- Type: NPN
- Collector-Emitter Voltage: 50 V
- Collector-Base Voltage: 60 V
- Emitter-Base Voltage: 5 V
- Collector Current: 0.1 A
- Collector Dissipation: 0.2 W
- DC Current Gain (hfe): 90 to 600
- Transition Frequency: 250 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 �C
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